Free space Terahertz Detector
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Features
- Based on LT-GaAs or GaBiAs photoconductive material
- Optimized for wavelengths around 800 nm or 1060 nm
- Wide spectral range and low noise
- Sub-picosecond temporal resolution
- Technical passport and test report included
Applications
- Time-resolved broadband THz spectroscopy
- Optical pump - THz probe spectroscopy
- THz imaging
Principle of Operation
THz detector consists of a microstrip photoconductive antenna (PCA) fabricated on GaAs substrate. Depending on pump laser wavelength either low temperature grown GaAs (LT-GaAs) or GaBiAs is used as photoconductor. On its surface a coplanar Hertzian type dipole antenna structure is formed using AuGeNi metallization.
THz detector is illuminated by laser beam from panel side. Laser beams must be focused between two electrodes (Fig. 1). The gap between metallic contacts is similar to laser spot diameter. THz radiation is collected by integrated lens, manufactured from high-resistivity silicon (HRFZ-Si), mounted on X-Y stage (Fig. 2). Adjustment screws are used for Si lens positioning onto PCA center. SMA sockets on back side of the housing are used for connecting lock-in amplifier input (or TRS-16 THz registration system) to THz detector. Any of three M6 holes can be used for THz detector mounting on optical table (Fig. 3).
Fig 1. Microstrip antenna drawing |
Fig 2. THz detector crossection |
Specifications
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*Detector with integrated preamplifier could be provided.
** With 100 fs laser pulse duration
Fig 4. Typical spectra when used THz emitter and detector made from LT-GaAs |
Fig 5. Typical spectra when used THz emitter and detector made from GaBiAs |
Ordering Information
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