Fiber Coupled THz Detector/Emitter

Price: 3500,- EUR (Excluding VAT)   

Description

There are two types of THz antennas: based on epitaxial layer of LT-GaAs (for excitation with 800 nm wavelenght lasers) and GaBiAs (for excitation with 1050 nm wavelenght lasers).

On its surface a coplanar Hertzian dipole type antenna structure is formed with a dipole width of 90 micrometers, the width of the photosensitive gap is 7-50 micrometers. In the case of GaBiAs, epitaxial active layer is mesa-etched in order to achieve high dark resistance. High photosensitivity of the material allows to use very low average power for excitation generated by a femtosecond fiber lasers. Photoconductive antenna is attached on 12 mm diameter hyper-hemispherical lens made from high-resistivity silicon. Laser radiation is focused using adjustable optical lens of the fiber port. Laser radiation is delivered through FC/PC fiber connector. SMA connector is used to apply bias or measure THz signal. Close to zero dispertion fiber for 780 nm lasers can be provided together with THz antenna.

a) 

b) 

Fig 1. Microstrip antenna drawing of a) detector and b) emitter

Standard Specifications

LTG-GaAs based photoconductive switch:

  • Dimensions of the wafer: 5x1.5 mm typical
  • Pumping wavelegth: 800 ± 40 nm.
  • Pumping power: < 50 mW
  • Integrated focusing lens: Si.
  • fiber connector: FC/PC

Fig 2. Typical detected spectra when used with TERAVIL THz emitter.

GaBiAs based photoconductive switch:

  • Dimensions of the wafer: 5x1.5 mm typical
  • Pumping wavelegth: 1050 ± 40 nm.
  • Pumping power: < 20 mW
  • Integrated focusing lens: Si.
  • fiber connector: FC/PC

Fig 3. Typical detected spectra when used with TERAVIL THz emitter.


The detector design was developed under TERAOPT project funded by "Mokslo, Inovacijų ir Technologijų Agentūra" (MITA).